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Figure 2.13 illustrates the even parity f ( E } . In practice, the finite number of discontinuities can lead to solutions being missed if the first guess to the solution E(0) is not close to the true solution. In order to circumvent this computational problem, f ( E ) is calculated at discrete points along the E axis, separated by an energy thought to be smaller than the minimum separation between adjacent states (generally 1 meV), when f ( E ) changes sign; then the Newton-Raphson is then implemented to obtain the solution accurately. Figures 2.14 and 2.15 summarise the application of the method to a GaAs single quantum well, surrounded by barrier of height 100 meV, with the same effective mass. Clearly, as the well width increases, then the energy levels all decrease, with the presence of excited states being also apparent at the larger well widths. The eigenstates are labelled according to their principle quantum number (energy order). The even and odd parities of the states within the well can be seen in Fig. 2.15.

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This suggests the construction of a loop with (15.3) as invariant and (15.4) as termination condition. We note that assigning P to r also establishes 0 ^ r in the case that 0 ^ P; conversely, it establishes r < Q in the case that P ^ 0. This suggests a case analysis on 0 < P or P ^ 0, whereby, in the first case, progress is made to the termination condition by continually decreasing r, and, in the second case, progress is made by continually increasing r. It is at this point that we make the assumption 0 < P and, as mentioned earlier, leave the other case as an exercise. Based on the analysis above, we add 0 < r as an invariant property, with the effect that the termination condition can be weakened to r < Q. Progress is made by continually decreasing r. The skeleton of an algorithm is thus as shown below, where variables m and n are the unknowns.

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2.6 EFFECTIVE MASS MISMATCH AT HETEROJUNCTIONS Quantum wells are only fabricated by forming heterojunctions between different semiconductors. From an electronic viewpoint, the semiconductors are different because they have different band structures. The difference in perhaps the most fundamental property of a semiconductor, i.e. the band gap, (and its alignment) is accounted for by specifying a band offset, which has been labelled V. Of course, there are many other properties which are also different, such as the dielectric constant, the lattice constant and, what is considered the next most important quantity, the effective mass. It is generally accepted that the calculation of static energy levels within quantum wells should account for the variation in the effective mass across the heterojunction. This problem has been continuously addressed in the literature [17,24,25] since the earliest work of Conley et al. [26] and BenDaniel and Duke [27], who derived the boundary conditions on solutions of the envelope functions as:

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Figure 7.1: Illustration of overfitting In order to detect the point of overfitting, the original data set is divided into three disjoint sets, i.e. the training set DT, the generalization set DG and the validation set DV- The validation set is then used to estimate the generalization error. Since both the training error and the validation error usually fluctuate, determining the point of overfitting is not straightforward. A moving average of the validation error has to be used. Overfitting is then detected when

{ 0<Q }

by considering electron transport across a heterojunction. These boundary conditions have become known as the BenDaniel-Duke boundary conditions.

r,d := P,0 ;

Figure 2.16 Electron ground state energy E1 as a function of the width lw of a GaAs well surrounded by Ga1 _x Alx As barriers, calculated for both the constant mass-model (closed circles) and different barrier masses (open circles) and for a range of barrier alloy concentrations x (=0.1,0.2, 0.3, 0.4)

(7.7)

{ Invariant: O^r A P r } Bound function:

Figure 7.3 Schematic illustration of a substrate with two mismatched layers, (a) shows the free-standing unstrained layers with lattice constants smaller a/ < ao (material A) and larger ai > ao (material B) than the lattice constant of the substrate and (b) shows the situation when either of the materials is grown on the substrate, i.e. material A is under tensile strain and material B is under compressive strain as their lattice constants are forced to be equal to the lattice constant of the substrate.

The remaining details are as follows. The loop body is executed when r ^ Q. So, ra and n are required to satisfy

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